Smoothness improvement of micrometer- and submicrometer-thick nanocrystalline diamond films produced by MWPECVD

Thick (around 3 mu m) and thin (48-310 nm) nanocrystalline diamond (NCD) films have been produced from Ar-richCH(4)/Ar/H-2 (1/89/10 %) and H-2-rich CH4/H-2 (1/99 %) microwave plasmas, respectively. The deposition rate and the nucleation enhancement have been monitored in situ and in real time by pyrometric and laser reflectance interferometry for micrometer-and nanometer-thick films. For thick films, an improvement of the NCD films' smoothness has been obtained by a buffer layer between the films and the treated Si substrate. For thin films, a combinatorial approach, i.e., a treatment of the Si substrate in a suspension of mixed diamond powders of 250 nm and 40-60 mu m, has been utilized. The present experimental results show that the buffer layer procedure allows good preservation of the surface of the treated Si substrate and the combinatorial approach promotes effectively the seeding of the Si surface.