On loading of a magneto-optical trap on an atom-chip with U-wire quadrupole field

The role of U-wire generated quadrupole-like magnetic field profile on loading of cold 87Rb atoms in a magneto-optical trap (MOT) on atom-chip has been investigated. It is shown by simulations that the quadrupole field profile and the centre of the quadrupole field vary depending upon the U-wire current and bias field values. Moreover, the resemblance of generated field profile to the ideal quadrupole field critically depends on the values of current in U-wire and bias magnetic field. The observed number of trapped atoms in the MOT and its position has also been found to depend on the quadrupole field profile. The number of trapped atoms in the MOT reaches maximum when the field profile approaches close to an ideal quadrupole field. These studies are, in general, useful in optimizing the number in the MOT before transfer of these cold atoms to the microtraps of an atom-chip.