Journal
JOURNAL OF MODERN OPTICS
Volume 59, Issue 17, Pages 1489-1499Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/09500340.2012.701340
Keywords
single photon avalanche diode (SPAD); photon counting; photon timing; photon detection efficiency (PDE); TCSPC; quantum efficiency (QE)
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Funding
- EC grant [248095]
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In this paper we present a new technology for the fabrication of Single Photon Avalanche Diodes (SPADs) aimed at combining the advantages of thin and thick SPADs. The new detector is manufactured in a thick epitaxial layer designed to improve the Photon Detection Efficiency (PDE) in the red and near-infrared range while maintaining a good timing resolution. Experimental characterization of the new red-enhanced SPAD (RE-SPAD) confirmed a significant improvement of the PDE compared with thin SPADs; for example the PDE at a wavelength of 800nm has increased from 15% to about 40%. Nevertheless the temporal resolution is still good, with a timing jitter of about 90 ps FWHM. In the same operating conditions the dark count rate is comparable with the one attainable with a thin SPAD (e. g. less than 25 cps for a 50 mu m diameter device cooled down to -5 degrees C). Moreover, being planar, the new technology is compatible with the fabrication of arrays of detectors.
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