Journal
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
Volume 22, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0960-1317/22/8/085034
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- Commission for Innovation and Technology (CTI) of the Swiss Federation [CTI 8448.2]
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This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out of the n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that the GF is dependent on the piezoresistor's length and width. Piezoresistors narrower than approximately 30 mu m showed a width-dependent GF. The highest GF of 20.8 was obtained with a single element piezoresistor in transverse orientation. In longitudinal orientation, the highest GF was -10, which was obtained with a clustered piezoresistor with plural identical elements. Essential factors to consider for the design of optimum 4H-SiC piezoresistors for a Wheatstone bridge configuration are presented.
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