Journal
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
Volume 22, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0960-1317/22/5/055021
Keywords
-
Categories
Funding
- Technology Development Centre of Finland (TEKES)
- Technical Research Centre of Finland (VTT)
- ENIAC-EU E3CAR [120001]
Ask authors/readers for more resources
This paper presents the fabrication and the electrical characterization of poly-Si filled through-silicon vias, which were etched in a 180 mu m thin silicon device wafer, bonded to a handle wafer by plasma activated oxide-to-silicon bonding. Heavily doped poly-Si was used as interconnection material, which was deposited by low-pressure chemical vapor deposition. Two different via geometries, i.e. stadium shaped, and circular shaped, were tried. Sputtered aluminum metallization layers as double-side redistribution lines and contact pads, were used. Both Kelvin structures and daisy chains were fabricated and their electrical resistances were measured. The electrical resistance of a single stadium-shaped via was measured to be about 24 Omega. The electrical resistance was varying from 60 Omega to 90 Omega for two-vias daisy chains. Measured results indicate that this via-first technology can be used for varying range of sensor applications like microphone, oscillator, resonator, etc where CMOS compatibility and high temperature processing are the prime requirements.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available