Journal
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Volume 20, Issue 4, Pages 791-793Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2011.2148159
Keywords
Grinding; separation technique; ultrathin microelectromechanical systems (MEMS)
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Funding
- Information Society Technologies (IST) of the European Commission [IST-027017]
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A complementary-metal-oxide-semiconductor-compatible fabrication technique for ultrathin silicon chips of arbitrary shape is reported. It combines deep reactive ion etching and wafer grinding to define the in-plane geometry and thickness of the chips, respectively. Neural probes with shaft lengths up to 12 mm and thicknesses down to 25 mu m were fabricated.
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