Journal
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Volume 19, Issue 6, Pages 1521-1523Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2010.2082500
Keywords
Dielectric constant; mechanical stress; micromachining; silicon dioxide; test structure
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Funding
- High-Tech Research and Development Program [2007AA04Z306, 2009AA04Z322]
- National Natural Science Foundation of China [90607002]
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The effect of mechanical stress on the dielectric constant of SiO2 is experimentally studied. A beam-bending method is used to extract the strain effect coefficient M-12. According to the measurements, the dielectric constant changes linearly with the stress. The value of M-12 is shown to be -(0.19 +/- 0.01) x 10(-21) m(2)/V-2. The mechanism underlying the phenomena is discussed.
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