Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 25, Issue 12, Pages 5416-5421Publisher
SPRINGER
DOI: 10.1007/s10854-014-2322-3
Keywords
-
Categories
Funding
- Wonkwang University
Ask authors/readers for more resources
Undoped ZnO thin films were successfully deposited on Si substrates by RF magnetron sputtering with different substrate temperatures. The dependence was systematically investigated the structural, morphology, chemical state and optical properties of ZnO thin films. Crystal quality, growth orientation and optical properties of ZnO thin films were improved at proper substrate temperature (450 A degrees C) whereas were deteriorated at higher temperature (600 A degrees C). X-ray photoelectron spectroscopy showed that proper substrate temperature promoted the formation of Zn-O bonding, resulting in an improvement of film quality, while higher temperature decreased the formation of the Zn-O bonding and increased the oxygen vacancy due to formation of an amorphous SiO2 layer at the interface of ZnO and Si, resulting in a degradation of film quality. Moreover, the amorphous SiO2 layer is formed by oxygen related to the Zn-O bonding, mainly. Therefore, the experimental results indicate that the substrate temperature plays an important role in the deposition of ZnO film on Si substrate and needs to be carefully selected to suppress a formation of an amorphous SiO2 layer.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available