Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 24, Issue 11, Pages 4399-4405Publisher
SPRINGER
DOI: 10.1007/s10854-013-1416-7
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- Defence Research Development Organisation, Government of India, New Delhi
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The polycrystalline praseodymium zinc zirconate Pr2ZnZrO6 (PZZO) is synthesized at 1,150 A degrees C by means of solid state reaction technique. X-ray structural analysis confirmed the formation of a single phase monoclinic structure at room temperature. The nonzero intercept in the Nyquist plot indicates the presence of an arc for frequency higher than the maximum frequency measured (1 MHz). Comparative study of the impedance and modulus plot confirm the contribution from grain and grain-boundary and grain-boundary contribution dominates in the material. The activation energy of the compound calculated from imaginary part of impedance plot is found to be 0.442 eV which suggests that the polaron hopping is responsible for conduction mechanism in PZZO. Semiconducting behavior of the material is observed. Summerfield scaling shows a quite satisfying overlap of the data at different temperatures on a single master curve.
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