Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 24, Issue 5, Pages 1635-1639Publisher
SPRINGER
DOI: 10.1007/s10854-012-0987-z
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Funding
- NSF [DMR-1149605]
- MRSEC Program of NSF [DMR-0520550]
- Arkansas Biosciences Institute
- [NSFC-51272038]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1149605] Funding Source: National Science Foundation
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This paper explores the significance of using bismuth as a surfactant during the molecular beam epitaxy growth of InAs quantum dots (QDs). The results show that Bi-mediated growth provides a practical solution towards achieving lower density QDs with high optical quality. The InAs QDs grown using Bi as a surfactant exhibit a 50 % lower QD density, narrower QD size distribution, and a doubled photoluminescence peak intensity at 16 K compared to those grown without Bi.
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