Deposition and optoelectronic properties of ITO (In2O3:Sn) thin films by Jet nebulizer spray (JNS) pyrolysis technique

Nanocrystalline ITO thin films were deposited on glass substrates by a new spray pyrolysis route, Jet nebulizer spray (JNS) pyrolysis technique, for the first time at different substrate temperatures varying from 350 to 450 A degrees C using a precursor containing indium and tin solution with 90:10 at% concentration. The structural, optical and electrical properties have been investigated as a function of temperature. X-ray diffraction analysis showed that the deposited films were well crystallized and polycrystalline with cubic structure having (222) preferred orientation. The optical band gap values calculated from the transmittance spectra of all the ITO films showed a blue shift of the absorbance edge from 3.60 to 3.76 eV revealing the presence of nanocrystalline particles. AFM analysis showed uniform surface morphology with very low surface roughness values. XPS results showed the formation of ITO films with In3+ and Sn4+ states. TEM results showed the nanocrystalline nature with grain size about 12-15 nm and SAED pattern confirmed cubic structure of the ITO films. The electrical parameters like the resistivity, mobility and carrier concentration are found as 1.82 x 10(-3) Omega cm, 8.94 cm(2)/Vs and 4.72 x 10(20) cm(-3), respectively for ITO film deposited at 400 A degrees C. These results show that the ITO films, prepared using the new JNS pyrolysis technique, have the device quality optoelectronic properties when deposited under the proposed conditions at 400 A degrees C.