Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 22, Issue 7, Pages 882-889Publisher
SPRINGER
DOI: 10.1007/s10854-010-0230-8
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- CSIR
- AICTE, New Delhi
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The effect of rapid thermal annealing on structural and electrical properties of high k HfO2 thin films is investigated. The films were initially deposited at pre-optimized sputtering voltage of 0.8 kV and substrate bias of 80 V in order to get optimized results for oxide charges and leakage current as a MOS device. The film properties were investigated for optimum annealing temperature in oxygen and optimum rapid thermal annealing temperature in nitrogen respectively to get the best electrical results as a MOS device structure. The film thickness, composition and microstructure is studied by Laser Ellipsometry, XRD and AFM and the effect of thermal annealing is shown. The electrical I-V and C-V characteristics of the annealed dielectric film were investigated employing Al-HfO2-Si MOS capacitor structure. The flat-band voltage (V (fb)) and oxide-charge density (Q (ox)) were extracted from the high-frequency C-V curve. Dielectric study were further carried out on HfO2 thin films having metal-insulator-metal (MIM) configuration over a wide temperature (300-500 K) and frequency (100 Hz to 1 MHz) range.
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