Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 20, Issue 12, Pages 1214-1218Publisher
SPRINGER
DOI: 10.1007/s10854-009-9854-y
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Funding
- Korean Government ( MOEHRD) [KRF-2007-521-D00191]
- Ministry of Knowledge Economy ( MKE)
- Korea Industrial Technology Foundation ( KOTEF)
- Korea Ministry of Education, Science and Technology ( MEST)
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n-ZnO:Ga/i-ZnO/p-Si heterojunction light-emitting diodes were fabricated on patterned Si substrates with increased interface area where hole carriers were transported to the i-ZnO layer. The patterned Si substrates were prepared by electrochemical etching, and the n-type ZnO:Ga films were deposited by high-temperature sputtering. In the patterned LED, the lower breakdown and greater leakage current under a reverse bias was attributed to the formation of a high density of grain boundaries and random tilting of the c-axis. Compared to an LED without patterning, the patterned substrates resulted in approximately 75% improvement in the output power of visible emission, which was attributed to a 1.33-fold increase in the heterojunction area and the increase in grain boundary density due to grain tilting.
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