Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 19, Issue -, Pages S96-S100Publisher
SPRINGER
DOI: 10.1007/s10854-008-9657-6
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InAs/GaAs quantum dot (QD) structures were grown by molecular beam epitaxy (MBE) with InAs coverages theta continuously graded from 1.5 ML to 2.9 ML. A critical coverage of 2.23 ML is found, above which the islands undergo ripening, which causes a fraction of quantum dots to increase in size and to eventually relax through the formation of pure, edge-type misfit dislocations which propagate towards the surface in the form of V-shaped defects. Concomitant with ripening, extended-defect related traps with activation energies of 0.52 and 0.84 eV were observed, and regarded as the cause of the significant worsening of the optical and electrical properties in high coverage structures. Their relationship with the observed dislocations is discussed.
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