Journal
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
Volume 30, Issue 4, Pages 365-370Publisher
JOURNAL MATER SCI TECHNOL
DOI: 10.1016/j.jmst.2013.09.015
Keywords
BiFeO3 thin films; Tb doping; Sol-gel method; Ferroelectric properties
Funding
- National Natural Science Foundation of China [51172135]
- Young Scientists Fund of the National Natural Science Foundation of China [51002092]
- Research and Special Projects of the Education Department of Shaanxi Province [12JK0445]
- Graduate Innovation Fund of Shaanxi University of Science and Technology [SUST-A04]
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Bi1-xTbxFeO3 thin films were prepared on SnO2 (fluorine doped tin oxide) substrates by a sol-gel method. The structural and electrical properties of the BiFeO3 thin films were characterized and tested. The results indicated that the diffraction peak of the Tb-doped BiFeO3 films was shifted towards right as the doping amounts were increased. The structure was transformed from the rhombohedral to tetragonal/orthorhombic phase. The Bi0.89Tb0.11FeO3 thin film showed the well-developed P-E loops, which enhanced remnant polarization (Pr = 88.05 mu C/cm(2)) at room temperature. The dielectric constant and dielectric loss of Bi0.89Tb0.11FeO3 thin film at 100 kHz were 185 and 0.018, respectively. Furthermore, the Bi0.89Tb0.11FeO3 thin film showed a relatively low leakage current density of 2.07 x 10(-5) A/cm(2) at an applied electric field of 150 kV/cm. The X-ray photoelectron spectroscopy (XPS) spectra indicated that the presence of Fe2+ ions in the Bi0.89Tb0.11FeO3 thin film was less than that in the pure BiFeO3.
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