Journal
JOURNAL OF MATERIALS SCIENCE
Volume 47, Issue 15, Pages 5735-5742Publisher
SPRINGER
DOI: 10.1007/s10853-012-6464-5
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A general expression for the pressure dependence of the energy gap of a series of group III-V and group II-VI ternary semiconductors have been derived based on Van Vechten's dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively.
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