Journal
JOURNAL OF MATERIALS SCIENCE
Volume 45, Issue 22, Pages 6174-6178Publisher
SPRINGER
DOI: 10.1007/s10853-010-4710-2
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Funding
- CIUNT [26/E439]
- ANPCyT-PICTR [20770, 35682]
- PROALAR-DAAD [DA0805]
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We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie-Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.
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