Related references
Note: Only part of the references are listed.Nanowires With Promise for Photovoltaics
Magnus T. Borgstrom et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2011)
Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires
Jesper Wallentin et al.
NANO LETTERS (2011)
Vapor-liquid-solid growth and Sb doping of Ge nanowires from a liquid Au-Sb-Ge ternary alloy
Eli Sutter et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2010)
Incorporation of the dopants Si and Be into GaAs nanowires
M. Hilse et al.
APPLIED PHYSICS LETTERS (2010)
Compensation mechanism in silicon-doped gallium arsenide nanowires
B. Ketterer et al.
APPLIED PHYSICS LETTERS (2010)
Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering
R. Cusco et al.
APPLIED PHYSICS LETTERS (2010)
Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires
Son T. Le et al.
APPLIED PHYSICS LETTERS (2010)
Doping Incorporation in InAs nanowires characterized by capacitance measurements
Gvidas Astromskas et al.
JOURNAL OF APPLIED PHYSICS (2010)
Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
N. A. Sanford et al.
JOURNAL OF APPLIED PHYSICS (2010)
Geometry- and size-dependence of electrical properties of metal contacts on semiconducting nanowires
Hongsik Park et al.
JOURNAL OF APPLIED PHYSICS (2010)
MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires
K. Sladek et al.
JOURNAL OF CRYSTAL GROWTH (2010)
Controlled in Situ n-Doping of Silicon Nanowires during VLS Growth and Their Characterization by Scanning Spreading Resistance Microscopy
Caroline Celle et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2010)
Scaling Dopant States in a Semiconducting Nanostructure by Chemically Resolved Electron Energy-Loss Spectroscopy: A Case Study on Co-Doped ZnO
Xuefeng Wang et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2010)
Na-Doped p-Type ZnO Microwires
Wei Liu et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2010)
Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy
Xin Ou et al.
NANO LETTERS (2010)
Patterned p-Doping of InAs Nanowires by Gas-Phase Surface Diffusion of Zn
Alexandra C. Ford et al.
NANO LETTERS (2010)
Asymmetric Doping in Silicon Nanostructures: The Impact of Surface Dangling Bonds
Ki-Ha Hong et al.
NANO LETTERS (2010)
Nanoscale Free-Carrier Profiling of Individual Semiconductor Nanowires by Infrared Near-Field Nanoscopy
J. M. Stiegler et al.
NANO LETTERS (2010)
Multimode Fabry-Perot Conductance Oscillations in Suspended Stacking-Faults-Free InAs Nanowires
Andrey V. Kretinin et al.
NANO LETTERS (2010)
P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires
Joseph Dufouleur et al.
NANO LETTERS (2010)
Measurement of Active Dopant Distribution and Diffusion in Individual Silicon Nanowires
Elad Koren et al.
NANO LETTERS (2010)
Changes in Contact Angle of Seed Particle Correlated with Increased Zincblende Formation in Doped InP Nanowires
Jesper Wallentin et al.
NANO LETTERS (2010)
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
Wei Guo et al.
NANO LETTERS (2010)
High-Performance Single Nanowire Tunnel Diodes
Jesper Wallentin et al.
NANO LETTERS (2010)
GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si
Katsuhiro Tomioka et al.
NANO LETTERS (2010)
Photovoltaics with Piezoelectric Core-Shell Nanowires
Fredrik Boxberg et al.
NANO LETTERS (2010)
In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
Magnus T. Borgstrom et al.
NANO RESEARCH (2010)
One-dimensional II-VI nanostructures: Synthesis, properties and optoelectronic applications
Jiansheng Jie et al.
NANO TODAY (2010)
Sulfur-doped gallium phosphide nanowires and their optoelectronic properties
Zhi-Gang Chen et al.
NANOTECHNOLOGY (2010)
Compensation mechanism in N-doped ZnO nanowires
Jingyun Gao et al.
NANOTECHNOLOGY (2010)
Electrical characteristics of core-shell p-n GaAs nanowire structures with Te as the n-dopant
J. Caram et al.
NANOTECHNOLOGY (2010)
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors
C. Thelander et al.
NANOTECHNOLOGY (2010)
Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors
K. E. Moselund et al.
NANOTECHNOLOGY (2010)
Spin-orbit qubit in a semiconductor nanowire
S. Nadj-Perge et al.
NATURE (2010)
Nucleation Antibunching in Catalyst-Assisted Nanowire Growth
Frank Glas et al.
PHYSICAL REVIEW LETTERS (2010)
Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
John Simon et al.
SCIENCE (2010)
Preferential Interface Nucleation: An Expansion of the VLS Growth Mechanism for Nanowires
Brent A. Wacaser et al.
ADVANCED MATERIALS (2009)
Nonuniform Nanowire Doping Profiles Revealed by Quantitative Scanning Photocurrent Microscopy
Jonathan E. Allen et al.
ADVANCED MATERIALS (2009)
Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
Hajime Goto et al.
APPLIED PHYSICS EXPRESS (2009)
Nd-doped silicon nanowires with room temperature ferromagnetism and infrared photoemission
Wei-Fan Lee et al.
APPLIED PHYSICS LETTERS (2009)
Doping-dependent nanofaceting on silicon nanowire surfaces
Fang Li et al.
APPLIED PHYSICS LETTERS (2009)
Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy
E. Koren et al.
APPLIED PHYSICS LETTERS (2009)
Crucial role of doping dynamics on transport properties of Sb-doped SnO2 nanowires
Annop Klamchuen et al.
APPLIED PHYSICS LETTERS (2009)
Gallium arsenide p-i-n radial structures for photovoltaic applications
C. Colombo et al.
APPLIED PHYSICS LETTERS (2009)
Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution
Huaping Song et al.
CRYSTAL GROWTH & DESIGN (2009)
Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
Natalia Seoane et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires
K. Jeganathan et al.
JOURNAL OF APPLIED PHYSICS (2009)
Controllable p-type doping of GaAs nanowires during vapor-liquid-solid growth
Christoph Gutsche et al.
JOURNAL OF APPLIED PHYSICS (2009)
Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy
Lorenzo Rigutti et al.
JOURNAL OF NANOMATERIALS (2009)
Zinc Incorporation via the Vapor-Liquid-Solid Mechanism into InP Nanowires
Maarten H. M. van Weert et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2009)
Atom-Probe Tomography of Semiconductor Materials and Device Structures
Lincoln J. Lauhon et al.
MRS BULLETIN (2009)
Catalyst-free Growth of Single-Crystal Silicon and Germanium Nanowires
Byung-Sung Kim et al.
NANO LETTERS (2009)
Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires
Ping-Jian Li et al.
NANO LETTERS (2009)
Growth System, Structure, and Doping of Aluminum-Seeded Epitaxial Silicon Nanowires
Brent A. Wacaser et al.
NANO LETTERS (2009)
Axial p-n Junctions Realized in Silicon Nanowires by Ion Implantation
S. Hoffmann et al.
NANO LETTERS (2009)
Doping Limits of Grown in situ Doped Silicon Nanowires Using Phosphine
Heinz Schmid et al.
NANO LETTERS (2009)
Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy
Patrick Parkinson et al.
NANO LETTERS (2009)
GaAs Core-Shell Nanowires for Photovoltaic Applications
Josef A. Czaban et al.
NANO LETTERS (2009)
Suppression of the vapor-liquid-solid growth of silicon nanowires by antimony addition
Pramod Nimmatoori et al.
NANOTECHNOLOGY (2009)
Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation
Pratyush Das Kanungo et al.
NANOTECHNOLOGY (2009)
Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking
Jordi Arbiol et al.
NANOTECHNOLOGY (2009)
Electrical transport properties of single undoped and n-type doped InN nanowires
T. Richter et al.
NANOTECHNOLOGY (2009)
Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy
S. Vinaji et al.
NANOTECHNOLOGY (2009)
Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers
M. Willander et al.
NANOTECHNOLOGY (2009)
Dopant profiling and surface analysis of silicon nanowires using capacitance-voltage measurements
Erik C. Garnett et al.
NATURE NANOTECHNOLOGY (2009)
Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire
Daniel E. Perea et al.
NATURE NANOTECHNOLOGY (2009)
Donor deactivation in silicon nanostructures
Mikael T. Bjork et al.
NATURE NANOTECHNOLOGY (2009)
Diameter-dependent dopant location in silicon and germanium nanowires
Ping Xie et al.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2009)
Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires
C. -Y. Wen et al.
SCIENCE (2009)
Tunable n-type conductivity and transport properties of Ga-doped ZnO nanowire arrays
Guo-Dong Yuan et al.
ADVANCED MATERIALS (2008)
Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes
Na Li et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2008)
Silicon nanowire tunneling field-effect transistors
M. T. Bjoerk et al.
APPLIED PHYSICS LETTERS (2008)
InAs nanowire metal-oxide-semiconductor capacitors
Stefano Roddaro et al.
APPLIED PHYSICS LETTERS (2008)
Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy
B. S. Sorensen et al.
APPLIED PHYSICS LETTERS (2008)
P-type doping of GaAs nanowires
D. Stichtenoth et al.
APPLIED PHYSICS LETTERS (2008)
Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy
Florian Furtmayr et al.
JOURNAL OF APPLIED PHYSICS (2008)
Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane
H. Schmid et al.
JOURNAL OF APPLIED PHYSICS (2008)
Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography
T. Xu et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2008)
Distribution of active impurities in single silicon nanowires
Go Imamura et al.
NANO LETTERS (2008)
Secondary Ion Mass Spectrometry of Vapor-Liquid-Solid Grown, Au-Catalyzed, Si Wires
Morgan C. Putnam et al.
NANO LETTERS (2008)
Transients in the Formation of Nanowire Heterostructures
Linus E. Froeberg et al.
NANO LETTERS (2008)
Doping concentration of GaN nanowires determined by opto-electrical measurements
T. Richter et al.
NANO LETTERS (2008)
Ion beam doping of silicon nanowires
Alan Colli et al.
NANO LETTERS (2008)
Single and Tandem Axial p-i-n Nanowire Photovoltaic Devices
Thomas J. Kempa et al.
NANO LETTERS (2008)
p-type ZnO nanowire arrays
G. D. Yuan et al.
NANO LETTERS (2008)
Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells
Y. B. Tang et al.
NANO LETTERS (2008)
Analysing the capacitance-voltage measurements of vertical wrapped-gated nanowires
O. Karlstrom et al.
NANOTECHNOLOGY (2008)
Precursor evaluation for in situ InP nanowire doping
M. T. Borgstrom et al.
NANOTECHNOLOGY (2008)
Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect
C. Liu et al.
NANOTECHNOLOGY (2008)
Twinning superlattices in indium phosphide nanowires
Rienk E. Algra et al.
NATURE (2008)
High-resolution detection of Au catalyst atoms in Si nanowires
Jonathan E. Allen et al.
NATURE NANOTECHNOLOGY (2008)
A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III–V nanowires
Kimberly A. Dick
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS (2008)
Mn doping of germanium nanowires by vapour-liquid-solid deposition
V. Grossi et al.
SUPERLATTICES AND MICROSTRUCTURES (2008)
Controlled nanoscale doping of semiconductors via molecular monolayers
Johnny C. Ho et al.
NATURE MATERIALS (2008)
Silicon to nickel-silicide axial nanowire heterostructures for high performance electronics
Walter M. Weber et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2007)
Raman scattering studies of electrically active impurities in in situ B-Doped silicon nanowires: Effects of annealing and oxidation
Takahiro Kawashima et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2007)
InAs/InP radial nanowire heterostructures as high electron mobility devices
Xiaocheng Jiang et al.
NANO LETTERS (2007)
Quantitative analysis of current-voltage characteristics of semiconducting nanowires: Decoupling of contact effects
Zhiyong Zhang et al.
ADVANCED FUNCTIONAL MATERIALS (2007)
Dopant ion concentration dependence of growth and faceting of manganese-doped GaN nanowires
Pavle V. Radovanovic et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2007)
Gate coupling and charge distribution in nanowire field effect transistors
D. R. Khanal et al.
NANO LETTERS (2007)
Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
G. M. Cohen et al.
APPLIED PHYSICS LETTERS (2007)
Transparent metallic Sb-doped SnO2 nanowires
Qing Wan et al.
APPLIED PHYSICS LETTERS (2007)
Remote p-doping of InAs nanowires
H.-Y. Li et al.
NANO LETTERS (2007)
Mn-doped AlN nanowires with room temperature ferromagnetic ordering
Y. Yang et al.
APPLIED PHYSICS LETTERS (2007)
Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition
Bin Xiang et al.
NANO LETTERS (2007)
Single quantum dot nanowire LEDs
Ethan D. Minot et al.
NANO LETTERS (2007)
Epitaxial growth of III-V nanowires on group IV substrates
Erik P. A. M. Bakkers et al.
MRS BULLETIN (2007)
Fully depleted nanowire field-effect transistor in inversion mode
Oliver Hayden et al.
SMALL (2007)
Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment
Ryan Tu et al.
NANO LETTERS (2007)
Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement
Mamadou Diarra et al.
PHYSICAL REVIEW B (2007)
Doping of germanium nanowires grown in presence of PH3
E. Tutuc et al.
APPLIED PHYSICS LETTERS (2006)
Formation and segregation energies of B and P doped and BP codoped silicon nanowires
Hartwin Peelaers et al.
NANO LETTERS (2006)
High-performance transparent conducting oxide nanowires
Qing Wan et al.
NANO LETTERS (2006)
Germanium nanowires: from synthesis, surface chemistry, and assembly to devices
D. Wang et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2006)
Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography
D. E. Perea et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2006)
Manganese-induced growth of GaAs nanowires
Faustino Martelli et al.
NANO LETTERS (2006)
Realization of a linear germanium nanowire p-n junction
Emanuel Tutuc et al.
NANO LETTERS (2006)
Interface study on heterostructured GaP-GaAs nanowires
Magnus T. Borgstrom et al.
NANOTECHNOLOGY (2006)
Gate capacitance of back-gated nanowire field-effect transistors
Olaf Wunnicke
APPLIED PHYSICS LETTERS (2006)
Size-dependent effects on electrical contacts to nanotubes and nanowires
Francois Leonard et al.
PHYSICAL REVIEW LETTERS (2006)
Near UV photoluminescence of Hg-doped GaN nanowires
Shao-Min Zhou
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2006)
Ultraviolet photodetector based on single GaN nanorod p-n junctions
M. S. Son et al.
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS (2006)
Structural properties of (111)B-oriented III-V nanowires
J Johansson et al.
NATURE MATERIALS (2006)
Control of Si nanowire growth by oxygen
Suneel Kodambaka et al.
NANO LETTERS (2006)
Surface segregation and backscattering in doped silicon nanowires
MV Fernández-Serra et al.
PHYSICAL REVIEW LETTERS (2006)
Synthesis and characterization of indium-doped ZnO nanowires with periodical single-twin structures
LA Xu et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2006)
Growth kinetics of heterostructured GaP-GaAs nanowires
MA Verheijen et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2006)
Three-dimensional nanoscale composition mapping of semiconductor nanowires
DE Perea et al.
NANO LETTERS (2006)
Morphology of germanium nanowires grown in presence of B2H6 -: art. no. 043113
E Tutuc et al.
APPLIED PHYSICS LETTERS (2006)
Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning
MHM van Weert et al.
APPLIED PHYSICS LETTERS (2006)
Electrical characterization of single GaN nanowires
E Stern et al.
NANOTECHNOLOGY (2005)
Encoding electronic properties by synthesis of axial modulation-doped silicon nanowires
C Yang et al.
SCIENCE (2005)
Excellent field-emission properties of P-doped GaN nanowires
BD Liu et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2005)
Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires
YF Wang et al.
NANO LETTERS (2005)
Well-aligned Mn-doped ZnO nanowires synthesized by a chemical vapor deposition method
JJ Liu et al.
APPLIED PHYSICS LETTERS (2005)
Zinc oxide nanostructures: Synthesis and properties
ZY Fan et al.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2005)
General synthesis of manganese-doped II-VI and III-V semiconductor nanowires
PV Radovanovic et al.
NANO LETTERS (2005)
Synthesis and magnetic properties of manganese-doped GaP nanowires
DS Han et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2005)
Ferromagnetic Mn-doped GaN nanowires
DS Han et al.
APPLIED PHYSICS LETTERS (2005)
Vertically aligned sulfur-doped ZnO nanowires synthesized via chemical vapor deposition
SY Bae et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2004)
Growth and modulation of silicon carbide nanowires
HJ Choi et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Effect of Sn dopant on the properties of ZnO nanowires
SY Li et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2004)
Electron transport in InAs nanowires and heterostructure nanowire devices
C Thelander et al.
SOLID STATE COMMUNICATIONS (2004)
Synthesis of tin-doped indium oxide nanowires by self-catalytic VLS growth
YQ Chen et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2004)
Single crystal nanowire vertical surround-gate field-effect transistor
HT Ng et al.
NANO LETTERS (2004)
Single-crystalline tin-doped indium oxide whiskers: Synthesis and characterization
Q Wan et al.
APPLIED PHYSICS LETTERS (2004)
Synthesis and fabrication of high-performance n-type silicon nanowire transistors
GF Zheng et al.
ADVANCED MATERIALS (2004)
Epitaxial growth of InP nanowires on germanium
EPAM Bakkers et al.
NATURE MATERIALS (2004)
Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires
JR Kim et al.
PHYSICAL REVIEW B (2004)
Structural and electrical properties of trimethylboron-doped silicon nanowires
KK Lew et al.
APPLIED PHYSICS LETTERS (2004)
Growth and transport properties of complementary germanium nanowire field-effect transistors
AB Greytak et al.
APPLIED PHYSICS LETTERS (2004)
Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire
S Dhara et al.
APPLIED PHYSICS LETTERS (2004)
Gallium nitride-based nanowire radial heterostructures for nanophotonics
F Qian et al.
NANO LETTERS (2004)
Epitaxial III-V nanowires on silicon
T Mårtensson et al.
NANO LETTERS (2004)
Gallium nitride nanowires doped with silicon
J Liu et al.
APPLIED PHYSICS LETTERS (2003)
Synthesis, optical, and magnetic properties of diluted magnetic semiconductor Zn1-xMnxO nanowires via vapor phase growth
YQ Chang et al.
APPLIED PHYSICS LETTERS (2003)
Electrical properties of zinc oxide nanowires and intramolecular p-n junctions
CH Liu et al.
APPLIED PHYSICS LETTERS (2003)
Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics
DW Wang et al.
APPLIED PHYSICS LETTERS (2003)
Single-electron transistors in heterostructure nanowires
C Thelander et al.
APPLIED PHYSICS LETTERS (2003)
Nitrogen-doped gallium phosphide nanowires
HW Seo et al.
CHEMICAL PHYSICS LETTERS (2003)
Current rectification in a single GaN nanowire with a well-defined p-n junction
GS Cheng et al.
APPLIED PHYSICS LETTERS (2003)
Single-electron tunneling in InP nanowires
S De Franceschi et al.
APPLIED PHYSICS LETTERS (2003)
Epitaxial directional growth of indium-doped tin oxide nanowire arrays
P Nguyen et al.
NANO LETTERS (2003)
Synthesis and optical properties of S-doped ZnO nanowires
BY Geng et al.
APPLIED PHYSICS LETTERS (2003)
Synthesis of p-type gallium nitride nanowires for electronic and photonic nanodevices
ZH Zhong et al.
NANO LETTERS (2003)
High performance silicon nanowire field effect transistors
Y Cui et al.
NANO LETTERS (2003)
Epitaxial core-shell and core-multishell nanowire heterostructures
LJ Lauhon et al.
NATURE (2002)
One-dimensional heterostructures in semiconductor nanowhiskers
MT Björk et al.
APPLIED PHYSICS LETTERS (2002)
Gallium nitride nanowire nanodevices
Y Huang et al.
NANO LETTERS (2002)
Scanning tunneling microscopic study of boron-doped silicon nanowires
DDD Ma et al.
APPLIED PHYSICS LETTERS (2001)
Gallium arsenide crystalline nanorods grown by molecular-beam epitaxy
HG Lee et al.
APPLIED PHYSICS LETTERS (2001)
Functional nanoscale electronic devices assembled using silicon nanowire building blocks
Y Cui et al.
SCIENCE (2001)
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
XF Duan et al.
NATURE (2001)
Doping and electrical transport in silicon nanowires
Y Cui et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2000)