Preparation of CuIn(SxSe1-x)2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe2

In this paper, polycrystalline Culn(SxSe1-x)(2) thin films with tunable lambda and E-g (band gap) values were prepared by controlling the sulfurization temperature (T) of CuInSe2 thin films X-ray diffraction indicated the CuIn(SxSe1-x)(2) films exhibited a homogeneous chalcopyrite structure When T increases from 150 to 500 degrees C, lambda increases from 0 to 1, and E-g increases from 0 96 to 1 43 eV The relations between x and E-g and the sulfurization process of CuIn(SxSe1-x)(2) thin films have been discussed This work provides an easy and low-cost technique for preparing large area absorber layers of solar cell with tunable E-g