Related references
Note: Only part of the references are listed.Atomic structure and relaxation behavior at AlN (0001)/Al2O3(0001) interface
Yuki Tokumoto et al.
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN (2006)
Open core threading dislocations in GaN grown by hydride vapour phase epitaxy
D. Cherns et al.
PHILOSOPHICAL MAGAZINE (2006)
Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition
Z. T. Chen et al.
JOURNAL OF CRYSTAL GROWTH (2006)
Atomic structure of AlN/Al2O3 interfaces fabricated by pulsed-laser deposition
Y Tokumoto et al.
JOURNAL OF MATERIALS SCIENCE (2006)
On the origin of a-type threading dislocations in GaN layers
YB Kwon et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2005)
Atomic structures and mechanical properties of single-crystal GaN nanotubes
B Xu et al.
PHYSICAL REVIEW B (2005)
Gallium nitride and related materials: challenges in materials processing
RF Davis et al.
ACTA MATERIALIA (2003)
Role of oxygen at screw dislocations in GaN
I Arslan et al.
PHYSICAL REVIEW LETTERS (2003)
Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N
D Cherns et al.
APPLIED PHYSICS LETTERS (2002)
Misfit relaxation of the AlN/Al2O3 (0001) interface -: art. no. 195329
T Kehagias et al.
PHYSICAL REVIEW B (2001)
Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
D Cherns et al.
APPLIED PHYSICS LETTERS (2001)
Screw dislocations in GaN: The Ga-filled core model
JE Northrup
APPLIED PHYSICS LETTERS (2001)
Characterization of threading dislocations in GaN epitaxial layers
T Hino et al.
APPLIED PHYSICS LETTERS (2000)
Mosaic growth of GaN on (0001) sapphire:: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries
V Potin et al.
PHYSICAL REVIEW B (2000)
Share Paper
