Journal
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
Volume 209, Issue 2, Pages 723-727Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jmatprotec.2008.02.041
Keywords
Silicon; Thermal expansion; CVD; Single crystal; Dilatometry; Strain
Funding
- Finnish National Technology Agency (Tekes) [40643/00]
- European Commission [NMP3-CT-2005-516975]
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Thermal expansion of CVD single crystal silicon was measured with a push-rod dilatometer up to 1100 degrees C for different crystallographic orientations of the specimen. Thermal analysis, Laue analysis and X-ray diffraction were used to verify silicon crystal orientation and absence of possible phase transformations. Coefficients of technical thermal expansion have been calculated in this temperature range and their variations with temperature have been demonstrated. These differences might cause anisotropy in thermal stresses, which has been calculated and compared with experimental values of dry-oxidised silicon wafers. (c) 2008 Elsevier B.V. All rights reserved.
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