Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 22, Issue 39, Pages 21265-21271Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2jm34162j
Keywords
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Funding
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2012R1A3A2026417]
- Second Stage of the Brain Korea 21 Project
- National Research Council of Science & Technology (NST), Republic of Korea [KK-1102-B0, KK-1102] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2012R1A3A2026417] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We studied high-k soluble yttrium oxide dielectrics for high performance oxide thin film transistors (TFTs). The electrical characteristics of yttrium oxide show leakage current density as less than 10(-6) A cm(-2) at 2 MV cm(-1) regardless of annealing temperature and a high dielectric constant of nearly 16. For the first time, all solution-processed fully transparent ZnO-TFTs based on spin-coated YOx gate dielectric layers with a small interfacial trap density and high capacitance were demonstrated, exhibiting a field-effect mobility of 135 cm(2) V-1 s(-1), a threshold voltage of 1.73 V, and an on-off current ratio of 5.7 x 10(7) as well as low-voltage operation. In addition to microstructural and electrical analyses for solution-processed YOx dielectrics, we investigated the influences of dielectric-semiconductor interfacial quality on device parameters. Our results suggest that solution-processable fully transparent oxide TFTs have the potential for low-temperature and high-performance application in transparent, flexible devices.
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