Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 22, Issue 33, Pages 16979-16985Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2jm32721j
Keywords
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Funding
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science and Technology, Korea [2011-0031639]
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology (MEST) [2010-0023180]
- Samsung Mobile Display for Development of OTFT backplane for AMOLED by a printing process
- World Class University Program through the Korea Science and Engineering Foundation
- MEST [R31-10026]
- National Research Foundation of Korea (NRF)
- Korean government (MEST) [2011-0029858]
- National Research Foundation of Korea
- Korean Government(MEST) [NRF-2009-C1AAA001-2009-0092950]
- National Research Foundation of Korea [2011-0031639, 2010-0029212] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Here we report the effects of a Cs-salt based charge injection interlayer on the characteristics of top-gate/bottom-contact (TG/BC) ambipolar polymer OFETs with poly(thienylenevinylene-co-phthalimide)s functionalized at the imide nitrogen with dodecyl (PTVPhI-C12). P-channel dominant PTVPhI-C12 ambipolar OFETs showed both an improved electron injection and blocked hole injection properties by insertion of a thermally deposited thin CsF interlayer between Au source/drain electrodes and the organic semiconductor. X-ray and UV photoelectron spectroscopy results exhibited that the work-function of the Au electrode progressively changed from -4.5 eV to -3.9 eV and the Fermi levels of PTVPhI-C12 concomitantly moved towards the LUMO level of the conjugated polymer with an increase of CsF thickness from 0 nm to 1.5 nm, respectively. Both the shifting of Au work-function and the molecular doping of PTVPhI-C12 by insertion of CsF provide an order of magnitude improved n-channel properties in p-channel dominant ambipolar PTVPhI-C12 OFETs. In the end, the characteristics of the PTVPhI-C12 complementary inverter were improved (gain > 23) by a selective deposition and optimization of the CsF interlayer thickness on the n-channel region of ambipolar CMOS inverters.
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