Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 21, Issue 16, Pages 6020-6026Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c0jm03971c
Keywords
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Funding
- 973'' Program [2011CB925600]
- National Natural Science Foundations of China [60827004, 90921002, 11044001]
- Natural Science Foundations of Fujian Province [A0810019, 2009J01267, 2010J01343]
- Science and Technology Programs of Fujian Province and Xiamen City
- CRI of UNC-Charlotte
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Well-aligned ZnO/ZnSe core/shell nanowire arrays with type-II energy alignment are synthesized via a two-step chemical vapor deposition method. Morphology and structure studies reveal a transition layer of wurtzite ZnSe between the wurtzite ZnO core and the cubic ZnSe shell. Type-II interfacial transitions are observed in the spectral region from visible to near infrared in transmission and photoluminescence. More significantly, for the first time, the interfacial transition is shown to extend the photoresponse of the prototype photovoltaic device based on the coaxial nanowire array to a threshold much below the bandgap of either component (3.3 and 2.7 eV, respectively) at 1.6 eV, with an external quantum efficiency of similar to 4% at 1.9 eV and 9.5% at 3 eV. These results represent a major advance towards the realization of all-inorganic type-II heterojunction photovoltaic devices in an optimal device architecture.
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