Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 21, Issue 18, Pages 6736-6741Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1jm00035g
Keywords
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Funding
- National Natural Science Foundation of China (NSFC) [60806028, 20901021]
- Chinese Ministry of Education [NCET-08-0764]
- National Natural Science Foundation of China [91027021]
- Fundamental Research Funds for the Central Universities
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Single-crystal p-type ZnSe nanowires (NWs) with zinc blende structure and [21-1] growth direction were synthesized by using bismuth (Bi) as dopant via a thermal co-evaporation method. The ZnSe : Bi NWs showed evident p-type conductivity with hole concentration up to 4.1 x 10(18) cm(-3) after the acceptor activation. Negative photoconductivity was first investigated in the p-ZnSe NWs, i.e., the conductivity of the NWs under light was dramatically lower than that in the dark. Surface effects arising from oxygen absorption and photo-desorption were suggested to be responsible for this. By using Al as the Schottky gate, high-performance nano-metal-semiconductor field-effect transistors (nanoMESFETs) were constructed, and measurements on the Al/p-ZnSe NW Schottky diode also revealed the bias-dependent photoresponse. It is expected that the p-type ZnSe : Bi NWs will have great potential in nano-optoelectronic applications.
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