Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 21, Issue 44, Pages 17688-17692Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1jm13640b
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Funding
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2010-0019626, 2010-0026614, R01-2007-000-11177-0]
- National Research Foundation of Korea [R01-2007-000-11177-0, 2010-0026614, 2010-0019626, 핵06B1505] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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InGaN/GaN nanopillar light-emitting diodes (LEDs) were fabricated using a highly homogeneous multilayer graphene (h-MLG) electrode. Four layers of h-MLG were prepared homogeneously using chemical vapor deposition and layer-by-layer transfer methods. The h-MLG exhibited excellent optical, structural and electrical properties for use as an electrode in the LEDs. The h-MLG was applied as a transparent top electrode by suspending only on the tip of nanopillar LEDs. The current-driven InGaN/GaN nanopillar LED with the h-MLG electrode was successfully operated at a high current injection and exhibited bright electroluminescence.
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