Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 21, Issue 46, Pages 18804-18809Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1jm13079j
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Funding
- National Research Foundation (NRF)
- Korean Government (MEST) through the Active Polymer Center Pattern Integration [R11-2007-050-01004-0]
- World Class University [R32-20031]
- Seoul city
- National Research Foundation of Korea [R32-2011-000-20031-0, 2007-0056558] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Foldable polymer thin film transistors gated by an ion gel dielectric were fabricated on a polymer substrate. Side gate structure was employed to simplify the fabrication process, which is a unique advantage of the transistors based on the ion gel dielectric. Utilizing the diffusion of crosslinkable oligomers in the P3HT thin films followed by UV gelation through a patterned mask, the ion gel made a strong bonding to the P3HT layer. Due to the deformable nature of the ion gel dielectric, the transistor arrays were electrically and mechanically stable at repeated folding events.
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