Effect of RF power on the formation and size evolution of nC-Si quantum dots in an amorphous SiOx matrix

The evolution of silicon quantum dots (Si-QDs) embedded in a-SiOx matrix has been controlled by varying the RF power in the He-diluted SiH4 plasma at a low substrate temperature of 300 degrees C in PECVD. By optimizing the plasma parameters, Si-QDs of very small size, down to similar to 2 nm in diameter, with extremely narrow size dispersion at FWHM similar to 1 nm and a very high density of similar to 2 x 10(12) cm(-2) has been obtained. The effect of applied RF power controlling the growth mechanism of Si-QDs has been explained by using probable plasma chemistry of SiH4 in He, inside the plasma. Si-QDs with such low dimension and with high density, embedded in a-SiOx matrix, are being reported for the first time. SiOx is the most preferred dielectric medium in device fabrication. This finding by direct plasma synthesis at low substrate temperature may provide strong impetus to the further development of optoelectronic and photonic devices based on Si-QDs.