Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 21, Issue 34, Pages 13068-13073Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1jm11691f
Keywords
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Funding
- Ministry of Education, Science and Technology [2010-0016310, 2010-0010296]
- National Research Foundation of Korea [2010-0010296] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We have developed solution-processed reduced graphene oxide (RGO) transistors with ion gel gate dielectrics. The combination of solution-processed high-capacitance ion gel gate dielectrics and spray-coated RGO films yielded high-performance RGO transistors that operated below 4 V. Two reduction processes were applied to GO: (i) chemical reduction by hydrazine and (ii) solvothermal reduction in N-methyl-2-pyrrolidone. Chemical reduction provided a more efficient route to reduce GO than solvothermal reduction, and the resulting RGO films yielded higher electron and hole mobilities than films based on solvothermal methods. Temperature-dependent transport studies revealed that higher mobilities in RGO films based on chemical reduction result from (i) more effective delocalization of the charge carriers, (ii) more numerous localized states near the Fermi energy, and (iii) a longer optimum hopping distance, compared to those for films based on solvothermal reduction.
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