Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 21, Issue 32, Pages 11996-12000Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1jm10812c
Keywords
-
Funding
- WCU [R31-2008-000-20012-0]
- Converging Research Center [2010K000984]
Ask authors/readers for more resources
We present a new technique to fabricate a highly ordered silicon pin-in-a-hole structure, in which each silicon nanowire is pinned in a hole, by combining polymer sphere arrays induced by Rayleigh instability with chemical etching process. With this process, we were able to create the novel structures that are periodic over very large areas (3 x 3 cm(2)), where the length of silicon nanowires can be varied by tuning the etching time. A silicon pin-in-a-hole structure was used as the template for preparing polymer nanotubes. And also these structures exhibited a superior anti-reflection property showing specular reflectance of about 0.2%, nearly three orders of magnitude lower than that of a planar silicon wafer.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available