Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 21, Issue 34, Pages 12605-12608Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1jm12968f
Keywords
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Funding
- National Natural Science Foundation of China [61006002]
- Shanghai Science & Technology Committee [1052nm02000]
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In this paper, the structural and electronic properties of ternary SnSxSe1-x semiconductor nanocrystals were systematically investigated through both experimental and computational methods. It reveals that the E-g can be modulated from 0.92 to 1.24 eV in an intrinsic linear variation by controlling the ratio of S/(S + Se). The varying tendency of band gap was also verified via first-principles calculations and analyzed by the density of states (DOS) curves.
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