Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 21, Issue 37, Pages 14203-14208Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1jm12167g
Keywords
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Funding
- Ministry of Education, Science, and Technology [R32-20031]
- MKE/KEIT [10030559]
- POSCO [2011Z088]
- Korean government (MEST) [2010-0029207]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10030559] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [KK-1007-B0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [R32-2011-000-20031-0, 2010-0029207] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A spontaneous assembly route to form a thin film of nanowires (NWs) was demonstrated and its feasibility was confirmed through the fabrication of a high-performance multi-Si NW field effect transistor (FET) using this route. Governed by the three mechanisms of spreading, trapping, and two-dimensional packing, the route was optimized for the concentration of Si NWs and the initial volume ratio of aqueous hydrochloride solution to isopropyl alcohol. The successfully formed Si NW thin-film was transferred on a flat polydimethylsiloxane (PDMS) mold and regulated using a repeatable conformal contact method with a new flat PDMS to prepare it for decal printing on an organic dielectric layer. Finally, after depositing the source and drain electrodes on the printed active layer, a high-performance 23-bridged Si NW FET exhibiting a mu(eff) of 51.4 cm(2) V-1 s(-1), an on/off drain current ratio of 10(5), and a V-th of 2.7 V was obtained.
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