Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 20, Issue 36, Pages 7881-7886Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c0jm01720e
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Funding
- EPSRC [EP/F019750/1]
- UCL
- Ramsay Memorial Fund
- Engineering and Physical Sciences Research Council [EP/F019750/1] Funding Source: researchfish
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Bismuth(III) tert-butoxide [Bi((OBu)-Bu-t)(3)] was utilised as a single-source precursor to controllably deposit thin films of different phases of bismuth oxide (Bi2O3) on glass substrates via low-pressure chemical vapour deposition (LPCVD). Band gaps for the different phases have been measured (E-g = 2.3-3.0 eV) and the films displayed excellent photodegradation of water under near-UV irradiation.
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