4.3 Article

High performance n-type organic transistors based on a distyrylthiophene derivative

Journal

JOURNAL OF MATERIALS CHEMISTRY
Volume 20, Issue 45, Pages 10103-10106

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c0jm02646h

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Funding

  1. Ministry of Education, Science and Technology of the Korea Government [RIAMIAM0209 (0417-20090011)]

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Organic field-effect transistors (OFETs) based on a distyryl-thiophene (DST) derivative, 3'-(thiophene-2,5-diyl)bis(2-(3,5-bis(tri-fluoromethyl) phenyl) acrylonitrile (THIO-Y), were fabricated. Attributed to strong intermolecular interactions, dense molecular packing and appropriate energy level, OFETs based on a single crystal and thin film of THIO-Y showed electron mobilities as high as 0.16 and 0.03 cm(2) V(-1)s(-1), respectively.

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