Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 20, Issue 13, Pages 2623-2629Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/b923375j
Keywords
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Funding
- Cornell Center for Materials Research
- National Science Foundation Materials Research Science and Engineering Center [NSF DMR-0520404]
- National Science Foundation
- NIH-NIGMS [DMR-0225180]
- National Science Foundation [ECS 03-35765]
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Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film-pentacene on SiO(2) exposed to acetone vapor-using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material.
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