Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 19, Issue 15, Pages 2207-2214Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/b814470m
Keywords
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Funding
- Korea Science & Engineering Foundation of the Korean Ministry of Education, Science & Technology (MEST) (National Research Laboratory for Polymer Synthesis & Physics and Center for Electro-Photo Behaviors in Advanced Molecular S
- MEST (Brain Korea 21 Program and World Class University Program)
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In this study, novel nonvolatile memory devices, based on a high performance polyimide, poly(3,3'-bis(diphenylcarbamyloxy)-4,4'-biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-DPC PI), were fabricated with a simple conventional solution coating process. The devices were found to exhibit programmable, rewritable nonvolatile memory characteristics with a high ON/OFF current ratio of up to 10(9), a long retention time in both ON and OFF states, and low power consumption. Moreover, the active 6F-HAB-DPC PI layer is thermally and dimensionally stable and thus hybridization with a complementary metal-oxide-semiconductor platform is feasible. The advantageous properties and ease of fabrication of the 6F-HAB-DPC PI based devices open up the possibility of the mass production of high performance digital nonvolatile polymer memory devices at low cost.
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