Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 19, Issue 28, Pages 4938-4945Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/b823536h
Keywords
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Funding
- Korean Government (MOEHRD, Basic Research Promotion Fund) [KRF-2007-313-DO0213]
- Korea Ministry of Knowledge Econorny (MKE) [2008-A011-0073]
- Korea Evaluation Institute of Industrial Technology (KEIT) [2008-N-PV08-P-02] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2007-313-D00213] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study we synthesized three low band-gap polymers-poly[2,3-bis(4-hexyloxyphenyl)quinoxaline-alt-2,5-thieno[3,2-b]thiophene] (PQTT), poly[2,3-bis(4-hexyloxyphenyl)quinoxaline-alt-3,6-dipentadecylthieiio[3,2-b]thiophene] (PQPDTT) and poly[2,3bis(4-hexyloxyphenyl)quinoxaline-alt-2,5-bis(thieno-2-yl)-3,6-dipentadecylthieno[3,2-b]thiophene] (PQTPDTT)-that are based on quinoxaline and thieno[3,2-b]thiophene, and examined their photovoltaic properties. The band-gaps of PQTT and PQTPDTT were 1.65eV and 1.7eV, respectively. For PQTPDTT, a HOMO level of -5.12eV, which was lower than that of P3HT, was observed. According to the analysis of the characteristics of the photovoltaic device using PC61 BM and PC71 BM as acceptors, an open circuit voltage (V-OC) of 0.71V. a short circuit current (J(SC)) of 8.80mA/cm(2), a fill factor of 0.36 and a power conversion efficiency (PCE) of 2.27% were observed at 100 mW/cm(2) (AM 1.5 illumination) when a PQTPDTT/PC71BM blend film was used as the active layer. A very high incident photon to current efficiency (IPCE) was detected (60% at 400nm, 57% at 500nm).
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