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Prospective important semiconducting nanotubes: synthesis, properties and applications

Journal

JOURNAL OF MATERIALS CHEMISTRY
Volume 19, Issue 41, Pages 7592-7605

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/b900521h

Keywords

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Funding

  1. National Natural Science Foundation of China [50872020]
  2. Program for New Century Excellent Talents of the University in China
  3. Shanghai Education Commission, China [08SG32]
  4. Donghua University
  5. Shanghai Leading Academic Discipline Project [B603]
  6. Program of Introducing Talents of Discipline to Universities [111-2-04]

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Semiconducting nanotubes with well-controlled dimensions, compositions and crystal structures represent a new class of intriguing systems for detailed studies of structure-property relationships at the nanoscale and prospective functional applications. This article features recent research progress in the design of different synthetic routes towards important semiconducting nanotubes made of group IV: silicon; group III-V: GaN, GaP, AlN, InN and InP, and group II-VI: ZnO, ZnS, ZnSe, CdS and CdSe. The fabricated nanotubes possess desirable atomic structures, surfaces, morphologies and properties to meet the growing demands and specific requirements of new technologies.

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