Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 19, Issue 34, Pages 6143-6148Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/b906782e
Keywords
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Funding
- National Science Foundation of China [20704016, 20834006]
- Ministry of Education of China [20070183202]
- Ministry of Science and Technology of China [2009CB623605]
- PCSIRT
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We report the synthesis and characterization of two high triplet energy compounds bis(4-(9-carbazolyl)phenyl)dimethylsilane (DMSiCBP) and bis(4-(9-carbazolyl) phenyl)diphenylsilane (DPSiCBP), which can be used as the host materials for blue phosphorescent devices. Triplet energy of both DMSiCBP and DPSiCBP arrive at a level of 3.0 eV, which is significantly higher than the commonly used host materials for blue phosphorescence, such as CBP(2.6 eV) and mCP(2.9 eV). The DPSiCBP is fully-amorphous with a higher glass transition temperature of 120 degrees C, and excellent morphologically stability based on DSC analysis and annealing atomic force microscopy (AFM) investigation. The phosphorescent EL devices, employing DPSiCBP doped with blue iridium complex Firpic as the emitting layer, show the maximum brightness of 12130 cd/m(2) and maximum luminous efficiency of 6.5 cd/A, which is superior to those of CBP-based devices.
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