4.5 Article

Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

Journal

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume 324, Issue 5, Pages 849-852

Publisher

ELSEVIER
DOI: 10.1016/j.jmmm.2011.09.031

Keywords

Spin injection; Graphene; Tunnel barrier; Atomic layer deposition

Funding

  1. PRESTO, Japan Science and Technology Agency
  2. Special Coordination Fund for Promoting Science and Technology
  3. MEXT
  4. CREST, Japan Science and Technology Agency

Ask authors/readers for more resources

We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of similar to 30 Omega has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene. (C) 2011 Elsevier B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available