4.5 Article

Investigation of induced parallel magnetic anisotropy at low deposition temperature in Ba-hexaferrites thin films

Journal

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume 324, Issue 5, Pages 711-716

Publisher

ELSEVIER
DOI: 10.1016/j.jmmm.2011.08.059

Keywords

Thin films; Substrate temperature; Parallel magnetic anisotropy; Surface morphology; Band gap energy

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In this paper we present the effect of low substrate temperature on structural, morphological, magnetic and optical properties of Ba-hexaferrite thin films. Films were deposited on single crystal Silicon (1 0 0) substrate employing the Pulsed Laser Deposition (PLD) technique. The structural, morphological, magnetic and optical properties are found to be strongly dependent on substrate temperature. The low substrate temperatures (room temperature to 200 degrees C) restrict the formation of larger grains. For the higher substrate temperature i.e., 400 degrees C, the grain size of the deposited thin film are much larger. The film grown at low substrate temperature do not show any anisotropy. As the substrate temperature is increased, the easy axis of the films alinged itself in the direction parallel to the film plane whereas the hard axis remained in the perpendicular direction. The higher substrate temperature caused the uniaxial magnetic anisotropy, which is very important in magnetic recording devices. The saturation magnetization and optical band gap energy values of 62 emu/cc and 1.75 eV, respectively, were achieved for the film of thickness 500 nm deposited at 400 degrees C. Higher values of coercivity, squareness and films thickness are associated with the growth of larger grains at higher substrate temperature. (C) 2011 Elsevier B.V. All rights reserved.

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