Journal
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume 320, Issue 23, Pages 3207-3228Publisher
ELSEVIER
DOI: 10.1016/j.jmmm.2008.08.060
Keywords
Magnetic semiconductor; Optical property; Metal to insulator transition
Funding
- Los Alamos National Laboratory LDRD
- Center for Integrated Nanotechnologies
- ONR [N00014-07-1-347]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0801388] Funding Source: National Science Foundation
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We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III-V host, which can result in carrier mediated ferromagnetism in these disordered semiconductors. Spectroscopic experiments provide direct access to the strength and nature of the exchange between holes and local moments; the degree of itineracy of the carriers; and the evolution of the states at the Fermi energy with doping. Taken together, the diversity of optical methods reveal that Mn is an unconventional dopant, in that the metal to insulator transition is governed by the strength of the hybridization between Mn and its p-nictogen neighbor. The interplay between the optical, electronic and magnetic properties of III-Mn-V magnetic semiconductors is of fundamental interest and may enable future spin-optoelectronic devices. (C) 2008 Elsevier B.V. All rights reserved.
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