Journal
JOURNAL OF LUMINESCENCE
Volume 148, Issue -, Pages 225-229Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jlumin.2013.11.058
Keywords
Thermoluminescence; Microfabrication; Yttria; Lanthanide; Thin film; Rare earth
Categories
Funding
- Defense Threat Reduction Agency [HDTRA1-10-1-0007]
- NSF through the MRSEC program
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Most thermoluminescent materials are created using crystal growth techniques; however, it would be of great utility to identify those few thermoluminescent materials that can be deposited using simpler methods, for example to be compatible with the early portions of a silicon integrated circuit or microelectromechanical fabrication process. In this work, thin films of yttrium oxide with a terbium impurity (Y2O3:Tb) were deposited on silicon wafers by electron beam evaporation. The source for the Y2O3:Tb was made by combining Y2O3 and Tb4O7 powders. The approximate thicknesses of the deposited films were 350 nm. After deposition, the films were annealed at 1100 degrees C for 30 s to improve crystallinity. There is a strong correlation between the x-ray diffraction (XRD) peak intensity and the thermoluminescent glow curve intensity. The glow curve displays at least two peaks at 140 degrees C and 230 degrees C. The emission spectra was measured using successive runs with a monochromator set to a different wavelength for each run. There are two main emission peaks at 490 nm and 540 nm. The terbium impurity concentration of approximately 1 mol% was measured using Rutherford backscattering spectrometry (RBS). The Y2O3:Tb is sensitive to UV, x-ray, and gamma radiation. The luminescent intensity per unit mass of UV irradiated Y2O3:Tb was about 2 times that of x-ray irradiated TLD-100. (C) 2013 Elsevier B.V. All rights reserved.
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