Journal
JOURNAL OF LUMINESCENCE
Volume 149, Issue -, Pages 170-175Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jlumin.2014.01.040
Keywords
Nanostructures; Thin films; Ni doped ZnS; Semiconductors; Photoluminescence
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Nanocrystalline Ni doped ZnS thin films were deposited on quartz, silicon, and glass substrates using chemical bath deposition method in a weak acidic solution containing ethylenediamine tetra acetic acid disodium salt (Na(2)EDTA) as a complexing agent for zinc ions and thioacetamide (TAA) as a sulfide source at 80 degrees C. The films were characterized by energy-dispersive X-ray spectrometer (EDX), inductively coupled plasma atomic emission spectroscopy (ICP-AES), Fourier transform-infrared (FT-IR) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectrophotometry, and photoluminescence (PL) spectroscopy. UV-vis transmission data showed that the films were transparent in the visible region. The X-ray diffraction analysis showed a cubic zinc blend structure. FE-SEM revealed a homogeneous morphology and dense nanostructures. The PL spectra of the ZnS:Ni films showed two characteristic bands, one broad band centered at 430 and another narrow band at 523 nm. Furthermore, concentration quenching effect on the photoluminescence intensity has been observed. (C) 2014 Elsevier B.V. All rights reserved.
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