Journal
JOURNAL OF LUMINESCENCE
Volume 132, Issue 12, Pages 3113-3117Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jlumin.2012.02.001
Keywords
Eu-doped GaN; MBE; Mg co-doping; LED
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Funding
- Grants-in-Aid for Scientific Research [23760281] Funding Source: KAKEN
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Recent progress on light-emitting diode having a Eu-doped GaN active layer is reported. Although the first success on LED using GaN:Eu has been achieved by OMVPE, the factors to be controlled during the crystal growth are not well understood. We found that GaN:Eu co-doped with Mg in NH3-MBE shows a Eu site which is excited only by the above band-gap excitation. The luminescence intensity is enhanced at least 10 times than that without Mg co-doping. The LED operation fabricated using Mg co-doping technique is successfully demonstrated. (c) 2012 Elsevier B.V. All rights reserved.
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