4.6 Article

Luminescence and defect studies of YAlO3:Dy3+, Sm3+ single crystals exposed to 100 MeV Si7+ ion beam

Journal

JOURNAL OF LUMINESCENCE
Volume 132, Issue 10, Pages 2679-2683

Publisher

ELSEVIER
DOI: 10.1016/j.jlumin.2012.04.030

Keywords

Luminescence; Ion irradiation; Single crystals; YAlO3; Dy3+; Sm3+

Categories

Funding

  1. IUAC under UFR-47314 scheme

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Ionoluminescence (IL) and photoluminescence (PL) spectra for different rare earth ions (Sm3+ and Dy3+) activated YAlO3 single crystals have been induced with 100 MeV Si7+ ions with fluence of 7.81 x 10(12) ions cm(-2). Prominent IL and PL emission peaks in the range 550-725 nm in Sm3+ and 482-574 nm in Dy3+ were recorded. Variation of IL intensity in Dy3+ doped YAlO3 single crystals was studied in the fluence range 7.81 x 10(12)-11.71 x 10(12) ions cm(-2). IL intensity is found to be high in lower ion fluences and it decreases with increase in ion fluence due to thermal quenching as a result of an increase in the sample temperature caused by ion beam irradiation. Thermoluminescence (TL) spectra were recorded for fluence of 5.2 x 10(12) ions cm(-2) on pure and doped crystals at a warming rate of 5 degrees C s(-1) at room temperature. Pure crystals show two glow peaks at 232 (Tg(1)) and 328 degrees C (Tg(2)). However, in Sm3+ doped crystals three glow peaks at 278 (Tg(1)), 332 (Tg(2)) and 384 degrees C (Tg(3)) and two glow peaks at 278 (Tg(1)) and 331 degrees C (Tg(2)) in Dy3+ was recorded. The kinetic parameters (E, b s) were estimated using glow peak shape method. The decay of IL intensity was explained by excitation spike model. (C) 2012 Elsevier B.V. All rights reserved.

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