Journal
JOURNAL OF LUMINESCENCE
Volume 131, Issue 5, Pages 1066-1069Publisher
ELSEVIER
DOI: 10.1016/j.jlumin.2011.01.023
Keywords
Silicon nanocrystal; Phosphorus; Boron; Co-doping; Multi-layer; Size distribution
Categories
Funding
- Mitsubishi Foundation
- Kawanishi-Shinmeiwa-Kinen Foundation
Ask authors/readers for more resources
Thin films consisting of the layers of phosphorus (P) and boron (B) co-doped Si nanocrystals (Si-ncs) and glass spacer layers were prepared and their photoluminescence properties were studied. Cross-sectional TEM observations revealed the growth of Si-ncs with narrow size distributions. The samples exhibited PL below the band gap energy of bulk Si crystal at room temperature. The low-energy PL is considered to arise from the transitions between donor and acceptor states in compensated Si-ncs. The successful formation of narrow size distribution co-doped Si nanocrystals promotes the study of the optical properties of compensated Si nanocrystals. (C) 2011 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available