4.6 Article

Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates

Journal

JOURNAL OF LUMINESCENCE
Volume 129, Issue 2, Pages 148-152

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.jlumin.2008.09.003

Keywords

Zinc oxide; Annealing; Photoluminescence; X-ray diffraction

Categories

Funding

  1. National Science Council [NSC 96-2112-M-236-001-MY3, NSC 95-2745-M-272-001]

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The structural and optical properties of ZnO films deposited on Si substrate following rapid thermal annealing (RTA) have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. After RTA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, an increase of the intensity and narrowing of the full-width at half-maximum (FWHM) of the (002) diffraction peak of the as-grown ZnO film. AFM images show roughening of the film surface due to increase of grain size after RTA. The PL spectrum reveals a significant improvement in the UV luminescence of ZnO films following RTA at 800 degrees C for 1 min. (C) 2008 Elsevier B.V. All rights reserved.

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