Journal
JOURNAL OF LUMINESCENCE
Volume 129, Issue 1, Pages 30-33Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jlumin.2008.07.017
Keywords
SnO2; Sol-gel; Erbium; Photoluminescence; Si nanocrystals; Sensitisation
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SnO2 thin films undoped and doped with antimony (Sb), erbium (Er) and Si nanocrystals (Si-nc) have been grown on silicon (Si) substrate using sol-gel method. Room-temperature photoluminescence (PL) measurement of undoped SnO2, under excitation at 280 nm, shows only one broad emission at 395 nm, which is related to oxygen vacancies. The PL of Er3+ ions was found to be enhanced after doping SnO2 with Sb and Si-nc. The excitation process of Er is studied and discussed. The calculation of cross-section suggests a sensitisation of Er PL by Si-nc. (C) 2008 Elsevier B.V. All rights reserved.
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