4.3 Article

Study of silicon photomultiplier performance in external electric fields

Journal

JOURNAL OF INSTRUMENTATION
Volume 13, Issue -, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1748-0221/13/09/T09006

Keywords

Cryogenic detectors; Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTS, G-APDs, CCDs, EBCCDs, EMCCDs etc); Double-beta decay detectors; Noble liquid detectors (scintillation, ionization, double-phase)

Funding

  1. CAS in China
  2. ISTCP in China
  3. DOE in the United States
  4. NSF in the United States
  5. NSERC in Canada
  6. CFI in Canada
  7. FRQNT in Canada
  8. NRC in Canada
  9. McDonald Institute (CFREF) in Canada
  10. IBS in South Korea
  11. RFBR in Russia
  12. Young Scientists Fund of the Chinese National Natural Science Foundation

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We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.

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